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PMBT3906M Datasheet PDF : 11 Pages
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NXP Semiconductors
PMBT3906M
40 V, 200 mA PNP switching transistor
Table 7. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Ce
emitter capacitance VEB = −500 mV;
IC = ic = 0 A; f = 1 MHz
fT
transition frequency VCE = −20 V;
IC = −10 mA;
f = 100 MHz
NF
noise figure
VCE = −5 V;
IC = −100 µA; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
Min Typ Max Unit
-
-
10
pF
250 -
-
MHz
-
-
4
dB
400
hFE
(1)
300
006aab120
200
(2)
(3)
100
0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
−0.3
IC
(A)
−0.2
IB (mA) = −5.0
−4.5
−4.0
−3.5
−3.0
−0.1
006aab121
−2.5
−2.0
−1.5
−1.0
−0.5
0
0
−2
−4
−6
−8
−10
VCE (V)
Tamb = 25 °C
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
PMBT3906M_1
Product data sheet
Rev. 01 — 22 July 2009
© NXP B.V. 2009. All rights reserved.
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