PMBT3906M Ver la hoja de datos (PDF) - NXP Semiconductors.
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PMBT3906M Datasheet PDF : 11 Pages
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NXP Semiconductors
PMBT3906M
40 V, 200 mA PNP switching transistor
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab603
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
PMBT3906M_1
Product data sheet
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = −30 V; IE = 0 A
current
IEBO
emitter-base cut-off VEB = −6 V; IC = 0 A
current
hFE
DC current gain
VCE = −1 V
IC = −0.1 mA
IC = −1 mA
IC = −10 mA
IC = −50 mA
IC = −100 mA
VCEsat
collector-emitter
saturation voltage
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
VBEsat
base-emitter
saturation voltage
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
td
delay time
tr
rise time
ton
turn-on time
ts
storage time
VCC = −3 V;
IC = −10 mA;
IBon = −1 mA;
IBoff = 1 mA
tf
fall time
toff
turn-off time
Cc
collector capacitance VCB = −5 V; IE = ie = 0 A;
f = 1 MHz
Rev. 01 — 22 July 2009
Min Typ Max Unit
-
-
−50 nA
-
-
−50 nA
60
180 -
80
180 -
100 180 300
60
130 -
30
50
-
-
−100 −250 mV
-
−165 −400 mV
-
−750 −850 mV
-
−850 −950 mV
-
-
35
ns
-
-
35
ns
-
-
70
ns
-
-
225 ns
-
-
75
ns
-
-
300 ns
-
-
4.5 pF
© NXP B.V. 2009. All rights reserved.
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