PM6670S(2008) Ver la hoja de datos (PDF) - STMicroelectronics
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Fabricante
PM6670S Datasheet PDF : 53 Pages
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PM6670S
Electrical characteristics
Table 6.
Symbol
Electrical characteristics (continued)
TA = 0 °C to 85 °C , VCC = AVCC = +5 V and LDOIN connected to VDDQ output if not
otherwise specified. (1)
Parameter
Test condition
Values
Unit
Min Typ Max
Soft end section
VDDQ Discharge resistance
in non-tracking discharge
mode
VTT discharge resistance in
non-tracking discharge mode
VTTREF discharge
resistance in non-tracking
discharge mode
VDDQ Output threshold
synchronous for final tracking
to non-tracking discharge
transition
VTT LDO section
ILDOIN,ON
LDO input bias current in
full-on state
S3 = S5 = +5 V, No load on VTT
ILDOIN,
STR
ILDOIN,
STD
LDO input bias current in
suspend-to-RAM state
LDO input bias current in
suspend-to-disk state
IVTTSNS, VTTSNS bias current
BIAS
IVTTSNS, VTTSNS leakage current
LEAK
IVTT,LEAK VTT leakage current
LDO linear regulator output
voltage (DDR2)
S3 = 0 V, S5 = +5 V,
No Load on VTT
S3 = S5 = 0 V, No Load on VTT
S3 = +5 V, S5 = +5 V,
VVTTSNS = VVSNS /2
S3 = 0 V, S5 = +5 V,
VVTTSNS = VVSNS /2
S3 = 0 V, S5 = +5 V,
VVTT = VVSNS /2
S3 = S5= +5 V, IVTT = 0 A,
MODE = DDRSEL = +5 V
LDO linear regulator output
voltage (DDR3)
S3 = S5= +5 V, IVTT = 0 A,
MODE = +5 V, DDRSEL = 0 V
VVTT
S3 = S5 = MODE = + 5 V,
-1 mA < IVTT < 1 mA
LDO output accuracy respect S3 = S5 = MODE = +5 V,
to VTTREF
-1 A < IVTT < 1 A
S3 = S5 = MODE = +5 V,
-2 A < IVTT < 2 A
15
25
35
Ω
15
25
35
1
1.5
2
kΩ
0.2
0.4
0.6
V
1
10
10
1
µA
1
1
-10
10
0.9
V
0.75
-20
20
-25
25
mV
-35
35
11/53
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