M5M5V4R08J-20 Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC

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M5M5V4R08J-20

4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM

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MITSUBISHI LSIs

M5M5V4R08J-12,-15,-20

4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM

(4)TIMING DIAGRAMS

Read cycle 1

A 0~18 VIH

VIL

DQ1~8 VOH

VOL

tv (A)

PREVIOUS DATA VALID

W=H

S=L

OE=L

t CR

ta(A)

UNKNOWN

tv (A)

DATA VALID

Read cycle 2 (Note 4)

VIH

S

VIL

t CR

ta(S)

(Note 5)

ten (S)

(Note 5)

tdis(S)

DQ1~8 VOH

VOL

ICC1

Icc

ICC2

W=H

OE=L

UNKNOWN

tPU

50%

DATA VALID

tPD

50%

Note 4. Addresses valid prior to or coincident with S transition low.

5. Transition is measured ±500mv from steady state voltage with specified loading in Figure 2.

Read cycle 3 (Note 6)

VIH

OE

VIL

t CR

ta (OE)

(Note 5)

tdis(OE)

(Note 5) ten(OE)

DQ1~8

VOH

VOL

W=H

S=L

UNKNOWN

DATA VALID

Note 6. Addresses and S valid prior to OE transition low by (ta(A)-ta(OE)), (ta(S)-ta(OE))

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