HYS64V8220GU-10 Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

HYS64V8220GU-10

PC66 & PC100 168 pin unbuffered DIMM Modules

Infineon Technologies 

HYS64(72)V4200/8220GU

SDRAM-Modules

Parameter

Refresh Cycle

Refresh Period (4096 cycles)

Self Refresh Exit Time

Symbol

Limit Values

Unit Note

-8

-8B

PC100-222 PC100-323

-10

PC66

min. max. min. max. min. max.

tREF

tSREX

– 64 – 64 – 64 ms 8)

10 – 10 – 10 – ns 9)

Read Cycle

Data Out Hold Time

tOH

Data Out to Low Impedance

tLZ

Data Out to High Impedance

tHZ

DQM Data Out Disable Latency tDQZ

3–3

3

– ns 4)

0–0

0 – ns

3

8

3 10 3 10 ns 10)

–

2

–

2

–

2 CLK

Write Cycle

Data input to Precharge

(write recovery)

Data In to Active/refresh

DQM Write Mask Latency

tDPL

2

–

2

–

2

– CLK

tDAL

5

–

5

–

5

– CLK

tDQW

0

–

0

–

0

– CLK

Semiconductor Group

9

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