HYS72V4200GU Ver la hoja de datos (PDF) - Infineon Technologies

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HYS72V4200GU

PC66 & PC100 168 pin unbuffered DIMM Modules

Infineon Technologies 

HYS64(72)V4200/8220GU

SDRAM-Modules

Operating Currents (TA = 0 to 70oC, Vdd = 3.3V ± 0.3V 1)

(Recommended Operating Conditions unless otherwise noted)

Parameter & Test Condition

OPERATING CURRENT

Symb. -8/-8B -10

max.

trc=trcmin., tck=tckmin.

Ouputs open, Burst Length = 4, CL=3

All banks operated in random access,

all banks operated in ping-pong manner

to maximize gapless data access

PRECHARGE STANDBY CURRENT in tck = min.

Power Down Mode

CS =VIH (min.), CKE<=Vil(max)

tck = Infinity

PRECHARGE STANDBY CURRENT in tck = min.

Non-Power Down Mode

CS = VIH (min.), CKE>=Vih(min)

tck = Infinity

ICC1 130

90

ICC2P

2

2

ICC2PS

1

1

ICC2N

35

30

ICC2NS

5

5

NO OPERATING CURRENT

tck = min., CS = VIH(min),

active state ( max. 4 banks)

CKE>=VIH(min.) ICC3N

45

40

CKE<=VIL(max.) ICC3P

8

8

BURST OPERATING CURRENT

tck = min.,

Read command cycling

AUTO REFRESH CURRENT

tck = min.,

Auto Refresh command cycling

SELF REFRESH CURRENT

Self Refresh Mode, CKE=0.2V

ICC4 100

70

ICC5

130

90

standard version ICC6

1

1

Note

mA 1

mA 1

mA 1

mA 1

mA 1

mA 1

mA 1

mA 1,2

mA 1

mA 1

Semiconductor Group

7

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