PHX18NQ11 Ver la hoja de datos (PDF) - Philips Electronics

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Fabricante

PHX18NQ11

N-channel TrenchMOS™ standard level FET

Philips Electronics 

PHX18NQ11T

N-channel TrenchMOS™ standard level FET

M3D308

Rev. 01 — 13 February 2004

Product data

1. Product profile

1.1 Description

N-channel enhancement mode field-effect power transistor in a fully isolated plastic

package using TrenchMOS™ technology.

1.2 Features

s Low on-state resistance

s Isolated mounting base

s Fast switching

s Low thermal resistance

1.3 Applications

s DC-to-DC converters

s Switched-mode power supplies

1.4 Quick reference data

s VDS ≤ 110 V

s Ptot ≤ 31.2 W

s ID ≤ 12.5 A

s RDSon ≤ 90 mΩ

2. Pinning information

Table 1: Pinning - SOT186A (TO-220F), simplified outline and symbol

Pin

Description

Simplified outline

1

gate (g)

2

source (s)

mb

3

drain (d)

mb

mounting base;

isolated

Symbol

d

g

MBB076

s

1 2 3 MBK110

SOT186A (TO-220F)

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