PHD3N40E Ver la hoja de datos (PDF) - Philips Electronics

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Fabricante

PHD3N40E

PowerMOS transistors Avalanche energy rated

Philips Electronics 

Philips Semiconductors

PowerMOS transistors

Avalanche energy rated

Product specification

PHP3N40E, PHB3N40E, PHD3N40E

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

EAS

EAR

IAS, IAR

Non-repetitive avalanche

energy

Unclamped inductive load, IAS = 0.9 A;

tp = 0.53 ms; Tj prior to avalanche = 25˚C;

VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer

to fig:17

Repetitive avalanche energy2 IAR = 2.5 A; tp = 2.5 µs; Tj prior to

avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;

refer to fig:18

Repetitive and non-repetitive

avalanche current

MIN.

-

-

-

MAX.

120

3.2

2.5

UNIT

mJ

mJ

A

THERMAL RESISTANCES

SYMBOL PARAMETER

Rth j-mb

Rth j-a

Thermal resistance junction

to mounting base

Thermal resistance junction

to ambient

CONDITIONS

SOT78 package, in free air

SOT404 and SOT428 packages, pcb

mounted, minimum footprint

MIN. TYP. MAX. UNIT

-

- 2.5 K/W

- 60 - K/W

- 50 - K/W

2 pulse width and repetition rate limited by Tj max.

December 1998

2

Rev 1.200

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