6A595
8-BIT SERIAL-INPUT,
DMOS POWER DRIVER
ELECTRICAL CHARACTERISTICS at TA = +25°C, VDD = 5 V, tir = tif ≤ 10 ns (unless otherwise
specified).
Characteristic
Output Breakdown
Voltage
Symbol
V(BR)DSX
Test Conditions
IO = 1 mA
Min.
50
Limits
Typ.
Max.
—
—
Units
V
Off-State Output
Current
Static Drain-Source
On-State Resistance
Source-Drain
Diode Voltage
IDSX
rDS(on)
VSD
VO = 40 V
VO = 40 V, TA = 125°C
IO = 350 mA
IO = 350 mA, TA = 125°C
IF = 350 mA
—
0.1
1.0
µA
—
0.2
5.0
µA
—
1.0
1.5
Ω
—
1.7
2.5
Ω
—
0.9
1.1
V
Nominal Output
Current
IO(nom) VDS(on) = 0.5 V, TA = 85°C
—
350
—
mA
Output Current
IO(chop) IO at which chopping starts, TC = 25°C
0.6
0.8
1.1
A
Logic Input Current
IIH
VI = VDD
—
—
1.0
µA
IIL
VI = 0
—
—
-1.0
µA
SERIAL-DATA
Output Voltage
VOH
IOH = -20 µA
IOH = -4 mA
4.9
4.99
—
V
4.5
4.7
—
V
VOL
IOL = 20 µA
—
0
0.1
V
IOL = 4 mA
—
0.3
0.5
V
Prop. Delay Time
tPLH
IO = 350 mA, CL = 30 pF
—
100
—
ns
tPHL
IO = 350 mA, CL = 30 pF
—
60
—
ns
Output Rise Time
tr
IO = 350 mA, CL = 30 pF
—
55
—
ns
Output Fall Time
tf
IO = 350 mA, CL = 30 pF
—
40
—
ns
Supply Current
IDD(off) Outputs OFF
—
0.5
5.0
mA
IDD(fclk) fclk = 5 MHz, CL = 30 pF, Outputs OFF
—
1.3
—
mA
Typical Data is at VDD = 5 V and is for design information only.
NOTE — Pulse test, duration ≤100 µs, duty cycle ≤2%.
4
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000