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PESD5V0S2BT

Low capacitance bi-directional double ESD protection diode in SOT23 package

Philips Electronics 

Philips Semiconductors

PESD5V0S2BT

Low capacitance bi-directional double ESD protection diode

38

Cd

(pF)

34

30

26

001aaa634

102

IR

IR(85 °C)

10

1

001aaa635

22

0

1

2

3

4

5

VR (V)

Tamb = 25 °C; f = 1 MHz.

Fig 5. Diode capacitance as a function of reverse

voltage; typical values.

10−1

75

100

125

150

Tj (°C)

IR < 1 nA measured at Tamb = 25 °C.

Fig 6. Relative variation of reverse leakage current as

a function of junction temperature; typical

values.

9397 750 13344

Product data sheet

Rev. 02 — 27 May 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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