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PUMH14 Datasheet PDF : 8 Pages
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NXP Semiconductors
PEMH14; PUMH14
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
100 nA
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
-
-
1
μA
-
-
50
μA
-
-
100 nA
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 1 mA
IC = 10 mA; IB = 0.5 mA
100 -
-
-
-
150 mV
R1
bias resistor 1 (input)
33
47
61
kΩ
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A; -
-
2.5 pF
f = 1 MHz
103
hFE
(1)
(2)
(3)
006aaa182
103
VCEsat
(mV)
102
006aaa183
(2) (1)
(3)
102
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
10
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PEMH14_PUMH14_3
Product data sheet
Rev. 03 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
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