PEMD48 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

PEMD48

NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ

NXP Semiconductors. 

NXP Semiconductors

PEMD48; PUMD48

NPN/PNP resistor-equipped transistors

103

hFE

102

10

006aac752

(1)

(2)

(3)

1

VCEsat

(V)

10-1

006aac753

(1)

(2)

(3)

1

10-1

1

10

102

IC (mA)

VCE = 5 V

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 40 C

Fig 4. TR1 (NPN): DC current gain as a function of

collector current; typical values

10

006aac754

10-2

10-1

1

10

102

IC (mA)

IC/IB = 20

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 40 C

Fig 5.

TR1 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

10

006aac755

VI(on)

(V)

(1)

(2)

1

(3)

VI(off)

(V)

(1)

(2)

1

(3)

10-1

10-1

1

10

102

IC (mA)

VCE = 0.3 V

(1) Tamb = 40 C

(2) Tamb = 25 C

(3) Tamb = 100 C

Fig 6. TR1 (NPN): On-state input voltage as a

function of collector current; typical values

10-1

10-1

1

10

IC (mA)

VCE = 5 V

(1) Tamb = 40 C

(2) Tamb = 25 C

(3) Tamb = 100 C

Fig 7. TR1 (NPN): Off-state input voltage as a

function of collector current; typical values

PEMD48_PUMD48

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 6 — 24 January 2012

© NXP B.V. 2012. All rights reserved.

7 of 16

Share Link: