PEMD48 Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
PEMD48
NXP Semiconductors.
PEMD48 Datasheet PDF : 17 Pages
| |||
NXP Semiconductors
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
TR1 (NPN)
-
TR2 (PNP)
-
VI
input voltage TR1
positive
-
negative
-
input voltage TR2
positive
-
negative
-
IO
output current
-
ICM
peak collector current
-
Ptot
total power dissipation Tamb 25 C
PEMD48 (SOT666)
[1][2] -
PUMD48 (SOT363)
[1] -
Per device
Ptot
total power dissipation Tamb 25 C
PEMD48 (SOT666)
[1][2] -
PUMD48 (SOT363)
[1] -
Tj
junction temperature
-
Tamb
ambient temperature
65
Tstg
storage temperature
65
Max Unit
50
V
50
V
10
V
5
V
+40
V
10
V
+5
V
12
V
100
mA
100
mA
200
mW
200
mW
300
mW
300
mW
150
C
+150 C
+150 C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMD48_PUMD48
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 24 January 2012
© NXP B.V. 2012. All rights reserved.
3 of 16
Share Link: