HYS72V64220GU-8B Ver la hoja de datos (PDF) - Infineon Technologies
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HYS72V64220GU-8B Datasheet PDF : 17 Pages
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HYS 64(72)V16200/3222(0)0/64220GU
SDRAM Modules
DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; VDD, VDDQ = 3.3 V ± 0.3 V
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 2.0 mA)
Output low voltage (IOUT = 2.0 mA)
Input leakage current, any input
(0 V < VIN < 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V < VOUT < VCC)
Symbol
Limit Values
min.
max.
VIH
2.0
VIL
– 0.5
VOH
2.4
VOL
–
II(L)
– 40
VCC + 0.3
0.8
–
0.4
40
Unit
V
V
V
V
µA
IO(L)
– 40
40
µA
Capacitance
TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
max. max. max. max.
32M×64 32M×72 32M×64 32M×72
Input capacitance
CI1
45
55
80
90
pF
(A0 to A11, BA0, BA1, RAS, CAS, WE)
Input capacitance (CS0 - CS3)
CI2
20
25
30
35
pF
Input capacitance (CLK0 - CLK3)
CICL
22
38
22
38
pF
Input capacitance (CKE0, CKE1)
CI3
22
38
50
55
pF
Input capacitance (DQMB0 - DQMB7) CI4
13
13
20
20
pF
Input/Output capacitance
(DQ0 - DQ63, CB0 - CB7)
CIO
13
12
20
20
pF
Input Capacitance (SCL, SA0 - 2)
Input/Output Capacitance
CSC
8
8
8
8
pF
CSD
10
10
10
10
pF
Semiconductor Group
7
1998-08-01
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