PDTC123YU Ver la hoja de datos (PDF) - Philips Electronics
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PDTC123YU Datasheet PDF : 11 Pages
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Philips Semiconductors
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA
IC =10 mA; IB = 0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 µA
VCE = 300 mV; IC = 20 mA
R2/R1 bias resistor ratio
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
100 nA
-
-
1
µA
-
-
50 µA
-
-
700 µA
35 -
-
-
-
150 mV
-
0.75 0.3 V
2.5 1.15 -
V
1.54 2.2 2.86 kΩ
3.6 4.5 5.5
-
-
2
pF
9397 750 14017
Product data sheet
Rev. 03 — 24 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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