PDTA123YS Ver la hoja de datos (PDF) - NXP Semiconductors.
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PDTA123YS Datasheet PDF : 18 Pages
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NXP Semiconductors
PDTA123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
103
hFE
102
10
006aaa103
(2) (1)
(3)
−1
VCEsat
(V)
−10−1
006aaa104
(1)
(2)
(3)
1
−10−1
−1
−10
−102
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−10
006aaa105
VI(on)
(V)
−1
(1)
(2)
(3)
−10−2
−1
−10
−102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
−10
006aaa106
VI(off)
(V)
−1
(1)
(2)
(3)
−10−1
−10−1
−1
−10
−102
IC (mA)
VCE = −0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
−10−1
−10−1
−1
−10
IC (mA)
VCE = −5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTA123Y_SER_4
Product data sheet
Rev. 04 — 3 September 2009
© NXP B.V. 2009. All rights reserved.
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