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PDTA123Y Datasheet PDF : 18 Pages
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NXP Semiconductors
PDTA123Y series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage
positive
-
negative
-
IO
output current (DC)
-
ICM
peak collector current
-
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT416
[1] -
SOT346
[1] -
SOT883
[2][3] -
SOT54
[1] -
SOT23
[1] -
SOT323
[1] -
Tstg
storage temperature
−65
Tj
junction temperature
-
Tamb
ambient temperature
−65
Max Unit
−50
V
−50
V
−5
V
+5
V
−12
V
−100 mA
−100 mA
150
mW
250
mW
250
mW
500
mW
250
mW
200
mW
+150 °C
150
°C
+150 °C
[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line.
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Conditions
in free air
Min Typ Max Unit
[1] -
-
833 K/W
[1] -
-
500 K/W
[2][3] -
-
500 K/W
[1] -
-
250 K/W
[1] -
-
500 K/W
[1] -
-
625 K/W
[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line.
PDTA123Y_SER_4
Product data sheet
Rev. 04 — 3 September 2009
© NXP B.V. 2009. All rights reserved.
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