PDTA123Y Ver la hoja de datos (PDF) - NXP Semiconductors.

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PDTA123Y

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

NXP Semiconductors. 

PDTA123Y series

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Rev. 04 — 3 September 2009

Product data sheet

1. Product profile

1.1 General description

PNP Resistor-Equipped Transistors (RET).

Table 1. Product overview

Type number Package

NXP

PDTA123YE

SOT416

PDTA123YK

SOT346

PDTA123YM

SOT883

PDTA123YS[1]

SOT54

PDTA123YT

SOT23

PDTA123YU

SOT323

JEITA

SC-75

SC-59A

SC-101

SC-43A

-

SC-70

JEDEC

-

TO-236

-

TO-92

TO-236AB

-

[1] Also available in SOT54A and SOT54 variant packages (see Section 2)

NPN

complement

PDTC123YE

PDTC123YK

PDTC123YM

PDTC123YS

PDTC123YT

PDTC123YU

1.2 Features

I Built-in bias resistors

I Simplifies circuit design

I Reduces component count

I Reduces pick and place costs

1.3 Applications

I General purpose switching and

amplification

I Inverter and interface circuits

I Circuit drivers

1.4 Quick reference data

Table 2.

Symbol

VCEO

IO

R1

R2/R1

Quick reference data

Parameter

collector-emitter voltage

output current (DC)

bias resistor 1 (input)

bias resistor ratio

Conditions

open base

Min Typ

-

-

-

-

1.54 2.2

3.6 4.5

Max Unit

−50 V

−100 mA

2.86 kΩ

5.5

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