XP132A01A0SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR

Número de pieza

componentes Descripción

Fabricante

XP132A01A0SR

Power MOS FET

TOREX SEMICONDUCTOR 

XP132A01A0SR

Power MOS FET

■ Electrical Characteristics

Drain/Source Voltage vs. Capacitance

10000

Vgs=0V, f=1MHz

Switching Time vs. Drain Current

1000

Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≦1%

tf

1000

100

0

Ciss

Coss

Crss

-5

-10

-15

-20

Drain/Source Voltage:Vds (V)

Gate/Source Voltage vs. Gate Charge

Vds=-10V, Id=-5A

-10

u

-8

-6

-4

-2

0

0

5

10

15

20

25

Gate Charge:Qg (nc)

100

td（off）

td（on）

tr

10

-0.1

-1

-10

Drain Current:Id (A)

Reverse Drain Current vs. Source/Drain Voltage

Pulse Test

-15

-10

Vgs＝-5V

-5

0.5V

0

0

-0.2

-0.4

-0.6

-0.8

-1

Source/Drain Voltage:Vsd (V)

10

1

0.1

0.01

0.001

0.0001

0.0001

Standardized Transition Thermal Resistance vs. Pulse Width

Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB)

Single Pulse

0.001

0.01

0.1

1

Pulse Width:PW (sec)

10

100

376

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