XP132A01A0SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR

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componentes Descripción

Fabricante

XP132A01A0SR

Power MOS FET

TOREX SEMICONDUCTOR 

XP132A01A0SR

Power MOS FET

x P-Channel Power MOS FET

x DMOS Structure

x Low On-State Resistance: 0.105Ω MAX

x Ultra High-Speed Switching

x SOP-8 Package

s Applications

q Notebook PCs

q Cellular and portable phones

q On-board power supplies

q Li-ion battery systems

s General Description

The XP132A01A0SR is a P-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

The small SOP-8 package makes high density mounting possible.

s Features

Low on-state resistance: Rds(on)=0.075Ω(Vgs=-10V)

Rds(on)=0.105Ω(Vgs=-5.5V)

Ultra high-speed switching

Operational Voltage: -5.5V

High density mounting: SOP-8

s Pin Configuration

S1

S2

S3

G4

SOP-8

(TOP VIEW)

8D

7D

6D

5D

s Equivalent Circuit

1

8

2

7

3

6

4

5

P-Channel MOS FET

(1 device built-in)

u

s Pin Assignment

PIN

NUMBER

PIN

NAME

FUNCTION

1~3

S

Source

4

G

Gate

5~8

D

Drain

s Absolute Maximum Ratings

Ta=25:

PARAMETER

SYMBOL RATINGS UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Vdss

Vgss

Id

Idp

Idr

-30

V

±20

V

-5

A

-15

A

-5

A

Continuous Channel

Power Dissipation (note)

Pd

2.5

W

Channel Temperature

Tch

150

:

Storage Temperature

Tstg

-55~150 :

Note: When implemented on a glass epoxy PCB

373

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