DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PDMB300E6C Ver la hoja de datos (PDF) - Nihon Inter Electronics

Número de pieza
componentes Descripción
Fabricante
PDMB300E6C
NIEC
Nihon Inter Electronics NIEC
PDMB300E6C Datasheet PDF : 4 Pages
1 2 3 4
PDMB300E6
PDMB300E6C
QS043-402-20391(4/5)
Fig.7- Collector Current vs. Switching Time (Typical)
1
0.8 tOFF
VCC=300V
RG=4.7(
VGE=±15V
TC=25°C
Resistive Load
0.6
tf
0.4
0.2 tON
tr(VCE)
0
0
100
200
300
400
500
Collector Current IC (A)
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
10
VCC=300V
5 IC=300A
VGE=±15V
TC=25°C
2 Resistive Load
1
0.5
toff
0.2 ton
0.1
0.05
tr(VCE)
tf
0.02
1
3
10
30
100
Series Gate Impedance RG (()
Fig.9- Collector Current vs. Switching Time
10
1
tOFF
VCC=300V
RG=4.7(
VGE=±15V
TC=125°C
Inductive Load
tON
0.1
tf
tr(Ic)
0.01
0.001
0
100
200
300
400
500
Collector Current IC (A)
Fig.11- Collector Current vs. Switching Loss
40
VCC=300V
RG=4.7(
VGE=±15V
TC=125°C
30 Inductive Load
EOFF
EON
20
ERR
10
0
0
100
200
300
400
500
Collector Current IC (A)
Fig.10- Series Gate Impedance vs. Switching Time
10
VCC=300V
5 IC=300A
VGE=±15V
TC=125°C
2 Inductive Load
1
0.5 toff
0.2 ton
0.1 tf
0.05
tr(IC)
0.02
1
3
10
30
100
Series Gate Impedance RG (()
Fig.12- Series Gate Impedance vs. Switching Loss
1000
300
100
VCC=300V
IC=300A
VGE=±15V
TC=125°C
Inductive Load
EON
30
EOFF
10
ERR
3
1
1
3
10
30
100
Series Gate Impedance RG (()
00
日本インター株式会社

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]