PDMB100B12C2 Ver la hoja de datos (PDF) - Nihon Inter Electronics
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PDMB100B12C2 Datasheet PDF : 3 Pages
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IGBT MODULE Dual 100A 1200V
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
10
VCC=600V
IC=100A
toff
5 VGE=±15V
TC=25℃
ton
2
tr
1
tf
0.5
0.2
0.1
0.05
5
10
20
50
100
200
Series Gate Impedance RG (Ω)
PDMB100B12C2
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
200
TC=25℃
TC=125℃
150
100
50
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
500
I F= 1 0 0 A
TC= 2 5 ℃
200
trr
100
50
20
10
5
IRrM
2
10
100
200
300
400
500
600
-di/dt (A/μs)
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.10- Reverse Bias Safe Operating Area
RG=10Ω
VGE=±15V
TC≦125℃
400
800
1200
1600
Collector to Emitter Voltage V CE (V)
1
5x10 -1
2x10 -1
1x10 -1
5x10 -2
Fig.11- Transient Thermal Impedance
FRD
IGBT
2x10 -2
1x10 -2
5x10 -3
TC=25℃
1 Shot Pulse
2x10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
1
10 1
Time t (s)
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