PBYR3060WT Ver la hoja de datos (PDF) - Philips Electronics
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PBYR3060WT Datasheet PDF : 5 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR30100WT series
PF / W
20
Vo = 0.550 V
Rs = 0.010 Ohms
15
PBYR30100PT
0.5
Tmb(max) / C122
D = 1.0
129
10
0.2
0.1
136
5
I
tp
D
=
tp
T
143
T
t
0
150
0
10
20
26
IF(AV) / A
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
PF / W
15
Vo = 0.550 V
Rs = 0.010 Ohms
10
PBYR30100
Tmb(max) / C
129
a = 1.57
1.9
2.2
2.8
136
4
5
143
0
150
0
5
10
15
IF(AV) / A
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
IF / A
100
Tj = 25 C
Tj = 125 C
80
Typ
60
PBYR30100PT
Max
40
20
Fig.3.
0
0
0.5
1
1.5
2
VF / V
Typical and maximum forward characteristic
per diode; IF = f(VF); parameter Tj
IR/ mA
100
PBYR30100PT
Tj/ C = 150
10
125
1
100
75
0.1
50
0.01
10 20 30 40 50 60 70 80 90 100
VR/ V
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
Cd/ pF
10000
PBYR30100PT
1000
100
10
1
10
100
VR/ V
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s) PBYR30100WT
Fig.6. Transient thermal impedance per diode;
Zth j-mb = f(tp).
November 1998
3
Rev 1.300
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