PBYR3040WT Ver la hoja de datos (PDF) - Philips Electronics
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PBYR3040WT Datasheet PDF : 5 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR3045WT series
15 Forward dissipation, PF (W)
Vo = 0.36 V
Rs = 0.012 Ohms
PBYR3045WT Ths(max) (C) 126
D = 1.0
0.5
10
0.2
134
0.1
5
I
tp
D = tp 142
T
T
t
0
150
0
5
10
15
20
25
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Forward dissipation, PF (W)
12
Vo = 0.36 V
Rs = 0.012 Ohms
10
PBYR3045WT
Tmb(max) (C)
130.8
a = 1.57
1.9
2.2
134
2.8
8
4
137.2
6
140.4
4
143.6
2
146.8
0
150
0
5
10
15
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
50 Forward current, IF (A)
Tj = 25 C
Tj = 125 C
40
PBYR3045WT
30
typ
20
max
10
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
Forward voltage, VF (V)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Reverse current, IR (mA)
100
PBYR3045WT
125 C
10
100 C
1 75 C
50 C
0.1
Tj = 25 C
0.01
0
25
50
Reverse voltage, VR (V)
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
Cd / pF
10000
PBYR3045CT
1000
100
1
10
100
VR / V
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
PD
tp
D=
tp
T
0.01
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s) PBYR3045WT
Fig.6. Transient thermal impedance per diode;
Zth j-mb = f(tp).
July 1998
3
Rev 1.200
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