PBYR3035PTF Ver la hoja de datos (PDF) - Philips Electronics
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PBYR3035PTF Datasheet PDF : 5 Pages
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Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR3045PTF series
PF / W
15
Vo = 0.3020 V
Rs = 0.0139 Ohms
10
0.1
PBYR1645F
0.5
0.2
Ths(max) / C
90
D = 1.0
110
5
I
tp
D = tp
130
T
T
t
0
150
0
5
10
15
20
25
IF(AV) / A
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
PF / W
14
Vo = 0.302 V
Rs = 0.0139 Ohms
12
10
8
PBYR1645F
4
2.8
Ths(max) / C
84
a = 1.57
92
2.2 1.9
110
118
6
126
4
134
2
142
0
150
0
5
10
15
IF(AV) / A
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
IF / A
50
Tj = 25 C
Tj = 125 C
40
PBYR1645
typ
max
30
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VF / V
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
IR / mA
100
PBYR1645
150 C
10
125 C
1
100 C
0.1
75 C
Tj = 50 C
0.01
0
25
50
VR/ V
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
Cd / pF
10000
PBYR1645
1000
100
1
10
100
VR / V
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
Zth j-hs (K/W)
10
1
0.1
PD
tp
t
0.01
10us
1ms
0.1s
10s
tp / s
Fig.6. Transient thermal impedance per diode;
Zth j-hs = f(tp).
August 1996
3
Rev 1.100
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