DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PBYR3035PTF Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza
componentes Descripción
Fabricante
PBYR3035PTF
Philips
Philips Electronics Philips
PBYR3035PTF Datasheet PDF : 5 Pages
1 2 3 4 5
Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR3045PTF series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. 65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
22
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Thermal resistance junction to
heatsink
Rth j-a
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes
(with heatsink compound)
in free air.
MIN.
-
-
TYP. MAX. UNIT
-
4.0 K/W
-
3.5 K/W
-
35
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF
Forward voltage (per diode)
IR
Reverse current (per diode)
Cd
Junction capacitance (per
diode)
CONDITIONS
IF = 30 A; Tj = 125˚C
IF = 20 A; Tj = 125˚C
IF = 30 A
VR = VRWM
VR = VRWM; Tj = 125 ˚C
f = 1MHz; VR = 5V; Tj = 25 ˚C to
125 ˚C
MIN.
-
-
-
-
-
-
TYP.
0.70
0.58
0.75
100
12
800
MAX.
0.75
0.65
0.80
200
40
-
UNIT
V
V
V
µA
mA
pF
August 1996
2
Rev 1.100

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]