DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PBYR3035PT Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza
componentes Descripción
Fabricante
PBYR3035PT
Philips
Philips Electronics Philips
PBYR3035PT Datasheet PDF : 5 Pages
1 2 3 4 5
Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR3045PT series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes
in free air.
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF
Forward voltage (per diode)
IR
Reverse current (per diode)
Cd
Junction capacitance (per
diode)
CONDITIONS
IF = 20 A; Tj = 125˚C
IF = 30 A; Tj = 125˚C
IF = 30 A
VR = VRWM
VR = VRWM; Tj = 125 ˚C
f = 1MHz; VR = 5V; Tj = 25 ˚C to
125 ˚C
MIN.
-
-
-
TYP.
-
-
45
MAX.
1.4
1.0
-
UNIT
K/W
K/W
K/W
MIN.
-
-
-
-
-
-
TYP.
0.55
0.67
0.71
100
12
800
MAX.
0.60
0.72
0.76
200
40
-
UNIT
V
V
µA
mA
pF
August 1996
2
Rev 1.100

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]