PBSS4140T Ver la hoja de datos (PDF) - Philips Electronics
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componentes Descripción
Fabricante
PBSS4140T Datasheet PDF : 9 Pages
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Philips Semiconductors
40 V, 1A
NPN low VCEsat (BISS) transistor
1000
handbook, halfpage
hFE
800
600
400
200
MLD660
(1)
(2)
(3)
010−1
1
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
104
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
Product specification
PBSS4140T
10
handbook, halfpage
VBE
(V)
1
MLD661
(1)
(2)
(3)
10−1
10−1
1
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10
102
103
104
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
103
handbook, halfpage
VCEsat
(mV)
102
MLD662
(1)
102
handbook, halfpage
RCEsat
(Ω)
10
MLD663
(2)
(3)
10
1
1
10
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
102
103
104
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
(1)
(2)
1
(3)
10−110−1
1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
10−2
10−3
10−4
IC (mA)
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
2004 Mar 16
5
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