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PBHV8540Z Datasheet PDF : 13 Pages
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NXP Semiconductors
PBHV8540Z
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
400
hFE
300
(1)
200
(2)
(3)
100
006aab174
0
10−1
1
10
102
103
IC (mA)
VCE = 10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4. DC current gain as a function of collector
current; typical values
1.6
VBE
(V)
1.2
006aab176
0.8
(1)
(2)
(3)
0.4
1.0
IC
(A)
0.8
0.6
0.4
006aab175
IB (mA) = 175
140
105
70
35
0.2
0
0
1
2
3
4
5
VCE (V)
Tamb = 25 °C
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
1.3
VBEsat
(V)
0.9
(1)
(2)
0.5
(3)
006aab177
0
10−1
1
10
102
103
104
IC (mA)
0.1
10−1
1
10
102
103
104
IC (mA)
VCE = 10 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 5
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
PBHV8540Z_2
Product data sheet
Rev. 02 — 14 January 2009
© NXP B.V. 2009. All rights reserved.
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