XP132A0340SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR

Número de pieza

componentes Descripción

Fabricante

XP132A0340SR

Power MOS FET

TOREX SEMICONDUCTOR 

XP132A0340SR

■Typical Performance Characteristics

DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE

-25

-5V

-20

-15

-3V

-2.5V

-3.5V

-4V

-4.5V

Pulse Test, Ta=25:

-2V

-10

DRAIN CURRENT vs. GATE-SOURCE VOLTAGE

Pulse Test, Vds=-10V

-25

-20

-15

-10

-5

Vgs＝-1.5V

0

0

-1

-2

-3

-4

-5

Drain-Source Voltage:Vds (V)

-5

125℃

Topr＝25℃

-55℃

0

0

-1

-2

-3

-4

-5

Gate-Source Voltage:Vgs (V)

DRAIN-SOURCE ON-STATE RESISTANCE

vs. GATE-SOURCE VOLTAGE

Pulse Test, Ta=25:

0.1

0.08

-7A

0.06

Id＝-4A

0.04

0.02

0

0

-1

-2

-3

-4

-5

Gate-Source Voltage:Vgs (V)

DRAIN-SOURCE ON-STATE RESISTANCE

vs. AMBIENT TEMPERATURE

Pulse Test

0.10

0.08

Id＝-7A

0.06

-2.5V

-4A

0.04

-4A,-7A

0.02

Vgs＝-4.5V

0.00

-60

-30

0

30 60 90 120 150

Ambient Temp.:Topr (:)

DRAIN-SOURCE ON-STATE RESISTANCE

vs. DRAIN CURRENT

Pulse Test, Ta=25:

1.00

0.10

-2.5V

Vgs＝-4.5V

0.01

0

-5

-10

-15

-20

-25

Drain Current:Id (A)

GATE-SOURCE CUT-OFF VOLTAGE VARIANCE

vs. AMBIENT TEMPERATURE

Vds=-10V, Id=-1mA

11

0.4

0.3

0.2

0.1

0.0

-0.1

-0.2

-0.3

-0.4

-60 -30

0

30 60 90 120 150

Ambient Temp.:Topr (:)

757

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