XP132A0340SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR
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XP132A0340SR Datasheet PDF : 4 Pages
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Power MOS FET
NP-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.04Ω (max)
NUltra High-Speed Switching
NSOP-8 Package
■General Description
The XP132A0340SR is a P-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■Applications
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
■Features
Low on-state resistance : Rds(on)=0.04Ω(Vgs=-4.5V)
: Rds(on)=0.06Ω(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage : -4.5V
High density mounting : SOP-8
■Pin Configuration
S1
S2
S3
G4
8D
7D
6D
5D
SOP-8
（TOP VIEW）
■Equivalent Circuit
1
8
2
7
3
6
4
5
P-Channel MOS FET
(1 device built-in)
■Pin Assignment
PIN NUMBER
1〜3
4
5〜8
PIN NAME
Ｓ
Ｇ
Ｄ
FUNCTION
Source
Gate
Drain
■Absolute Maximum Ratings
11
Ta=25:
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Vdss
-20
V
Gate-Source Voltage
Vgss
±8
V
Drain Current (DC)
Id
-7
A
Drain Current (Pulse)
Idp
-25
A
Reverse Drain Current
Idr
-7
A
Continuous Channel
Power Dissipation (note)
Pd
2.5
W
Channel Temperature
Tch
150
:
Storage Temperature
Tstg
-55~150
:
Note: When implemented on a glass epoxy PCB
755
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