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GS74116AX-8

256K x 16 4Mb Asynchronous SRAM

Giga Semiconductor 

Read Cycle 2: WE = VIH

Address

CE

UB, LB

OE

Data Out

tRC

tAA

tAC

tLZ

tAB

tBLZ

tOE

tOLZ

High impedance

tHZ

tBHZ

tOHZ

Data valid

GS74116ATP/J/X

Write Cycle

Parameter

Write cycle time

Address valid to end of write

Chip enable to end of write

Byte enable to end of write

Data set up time

Data hold time

Write pulse width

Address set up time

Write recovery time (WE)

Write recovery time (CE)

Output Low Z from end of write

Write to output in High Z

-7

-8

-10

-12

Symbol

Unit

Min Max Min Max Min Max Min Max

tWC

7

—

8

—

10

—

12

—

ns

tAW

5

—

5.5

—

7

—

8

—

ns

tCW

5

—

5.5

—

7

—

8

—

ns

tBW

5

—

5.5

—

7

—

8

—

ns

tDW

3.5

—

4

—

4.5

—

6

—

ns

tDH

0

—

0

—

0

—

0

—

ns

tWP

5

—

5.5

—

7

—

8

—

ns

tAS

0

—

0

—

0

—

0

—

ns

tWR

0

—

0

—

0

—

0

—

ns

tWR1

0

—

0

—

0

—

0

—

ns

tWLZ*

3

—

3

—

3

—

3

—

ns

tWHZ*

—

3

—

3.5

—

4

—

5

ns

* These parameters are sampled and are not 100% tested.

Rev: 1.03 10/2002

7/14

© 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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