DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

P6SMB380A(2017) Ver la hoja de datos (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

Número de pieza
componentes Descripción
Fabricante
P6SMB380A
(Rev.:2017)
LUGUANG
Shenzhen Luguang Electronic Technology Co., Ltd LUGUANG
P6SMB380A Datasheet PDF : 3 Pages
1 2 3
P6SMB Series
Transient Voltage Suppressors
Ratings and Characteristics Curves (TA=25ɗ unless otherwise noted)
1A0M0 BIENAVERAGE FORWARD CURRENT, (A)
100
0
25
75150
100
100
0
1
1008T.J3=mTsJ
max.
Single
Half
Sine-Wave
80
100
22
60
50
40
25
20
0
0
0 25 50 75 100 125 150 175 200
1
Ambient Temperature ,TA (ɗ)
Fig. 1 - Pulse Derating Curve
5.0
100
0
5
73 4.0 5
##
0
10
3.0
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive
Surge Current
0.1
30
10000 0.22
2.0
1
1.0
0.0
0
25 50 75 100 125 150 175 200
Lead Temperature , TL (ɗ)
Fig. 3 - Steady State Power Derating Curve
0.1
0.1
1
10
100
1000
10000
Pulse Width ,td (ȝs)
Fig. 4 - Peak Pulse Power Rating Curve
100
50
0
0
Tr=10ȝs
Peak Value
(Ipp)
TJ = 25 ƱC
Pulse Width (td) is defined as the
pdoeci0natyws thoer5e0t%he0opfeIapkpcurrent
0.2 100
10000
1000
Ķ ĵĶı
ĵııı ĸı
Ķ ĵĶı
Bi-directional
@zero bias
Uni-directional
@zero bias
Half 0V.a5lue = Ipp76
1 2 50
100
Uni-diijreĹcıtıional @ĵVı RWM
Ķ ĵĶı
1.5 33
ijĶıı ĸ
td
21as0/d1e0f0in0e2dȝ3sbeyc.RW.Ea.vAe.form
3 13
4 10
Ķ ĵĶı
10
ijııı IJı
fT=J1=.205M°HCz
Bi-directional @VRWM
1
1
2
3
4
1
10
100
1000
Time , (ms)
Reverse Breakdown Voltage,VBR (V)
Fig. 5 - Pulse Waveform
Fig. 6 - Typical Junction Capacitance
Revision:20170301-P1
http://www.lgesemi.com
mail:lge@lgesemi.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]