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FSL913A0R4 Ver la hoja de datos (PDF) - Intersil

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componentes Descripción
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FSL913A0R4 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
FSL913A0D, FSL913A0R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
VSD
trr
TEST CONDITIONS
ISD = 7A
ISD = 7A, dISD/dt = 100A/µs
MIN
TYP
MAX
UNITS
-0.6
-
-1.8
V
-
-
160
ns
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
Gate to Source Threshold Volts (Note 3)
Gate to Body Leakage
(Notes 2, 3)
Zero Gate Leakage
(Note 3)
Drain to Source On-State Volts (Notes 1, 3)
Drain to Source On Resistance (Notes 1, 3)
NOTES:
BVDSS
VGS(TH)
IGSS
IDSS
VDS(ON)
rDS(ON)12
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = ±20V, VDS = 0V
VGS = 0, VDS = -80V
VGS = -12V, ID = 7A
VGS = -12V, ID = 4A
-100
-2.0
-
-
-
-
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
MAX
-
-6.0
100
25
-2.31
0.300
UNITS
V
V
nA
µA
V
Single Event Effects (SEB, SEGR) (Note 4)
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Ni
26
43
Br
37
36
Br
37
36
Br
37
36
APPLIED
VGS BIAS
(V)
20
10
15
20
(NOTE 6)
MAXIMUM
VDS BIAS (V)
-100
-100
-80
-50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves Unless Otherwise Specified
-120
-100
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
-80
-60
-40
-20
TEMP = 25oC
0
0
5
10
15
20
25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
1E-3
1E-4
1E-5
1E-6
ILM = 10A
30A
100A
300A
1E-7
-10
-30
-100
-300
DRAIN SUPPLY (V)
-1000
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
4-3

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