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Fabricante
MMBT2222A Datasheet PDF : 7 Pages
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
75
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
40
Emitter-Base Breakdown Voltage
BVEBO
6.0
Collector Cut-Off Current
ICBO
10
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Base Cut-Off Current
ON CHARACTERISTICS (Note 10)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
ICEX
10
ICEV
10
IEBO
10
IBL
20
35
50
75
hFE
100
300
40
50
35
VCE(SAT)
0.3
1.0
VBE(SAT)
0.6
1.2
2.0
Cobo
8
Cibo
—
25
Current Gain-Bandwidth Product
fT
300
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
NF
4.0
tD
10
Rise Time
tR
25
Storage Time
tS
225
Fall Time
tF
60
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBT2222A
Unit
Test Condition
V
IC = 100µA, IE = 0
V
IC = 10mA, IB = 0
V
IE = 100µA, IC = 0
nA
VCB = 60V, IE = 0
µA
VCB = 60V, IE = 0, TA = +150°C
nA
VCE = 60V, VEB(OFF) = 3.0V
nA
VCE = 60V, VBE = ±0.25V
nA
VEB = 5.0V, IC = 0
nA
VCE = 60V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
pF
pF
MHz
dB
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 20V, IC = 20mA,
f = 100MHz
VCE = 10V, IC = 100µA,
RS = 1.0kΩ, f = 1.0kHz
ns
VCC = 30V, IC = 150mA,
VBE(OFF) = - 0.5V, IB1 = 15mA
ns
VCC = 3.0V, IC = 150mA, IB1 = 15mA,
VBE(OFF) = 0.5V
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
ns
VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA
MMBT2222A
Document number: DS30041 Rev. 16 - 2
4 of 7
www.diodes.com
April 2016
© Diodes Incorporated
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