HUFA75345P3 Ver la hoja de datos (PDF) - Fairchild Semiconductor

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componentes Descripción

Fabricante

HUFA75345P3

75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs

Fairchild Semiconductor 

HUFA75345G3, HUFA75345P3, HUFA75345S3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

CAPACITANCE SPECIFICATIONS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS = 25V, VGS = 0V,

f = 1MHz

(Figure 12)

Source to Drain Diode Specifications

PARAMETER

Source to Drain Diode Voltage

Reverse Recovery Time

Reverse Recovered Charge

SYMBOL

VSD

trr

QRR

TEST CONDITIONS

ISD = 75A

ISD = 75A, dISD/dt = 100A/µs

ISD = 75A, dISD/dt = 100A/µs

Typical Performance Curves

MIN TYP MAX UNITS

-

4000

-

pF

-

1450

-

pF

-

450

-

pF

MIN

TYP

MAX UNITS

-

-

1.25

V

-

-

110

ns

-

-

225

nC

1.2

1.0

0.8

0.6

0.4

0.2

0

0

25

50

75 100 125 150 175

TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

80

60

40

20

0

25

50

75

100

125

150

175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

1 0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.01

10-5

SINGLE PULSE

10-4

10-3

10-2

10-1

t, RECTANGULAR PULSE DURATION (s)

PDM

t1

t2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

100

101

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2003 Fairchild Semiconductor Corporation

HUFA75345G3, HUFA75345P3, HUFA75345S3S Rev. B1

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