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HUF76137P3

75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

Fairchild Semiconductor 

HUF76137P3, HUF76137S3S

Electrical Specifications TA = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

Turn-On Delay Time

Rise Time

tON

VDD = 15V, ID ≅ 75A,

-

td(ON)

RL = 0.20Ω, VGS = 10V,

RGS = 5.6Ω

-

tr

(Figures 16, 21, 22)

-

Turn-Off Delay Time

td(OFF)

-

Fall Time

tf

-

Turn-Off Time

tOFF

-

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Gate Charge at 5V

Threshold Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

CAPACITANCE SPECIFICATIONS

Qg(TOT) VGS = 0V to 10V VDD = 15V,

-

Qg(5)

VGS = 0V to 5V

ID ≅ 55A,

RL = 0.273Ω

-

Qg(TH) VGS = 0V to 1V

Ig(REF) = 1.0mA

-

(Figures 14, 19, 20)

Qgs

-

Qgd

-

Input Capacitance

Output Capacitance

CISS

VDS = 25V, VGS = 0V,

-

f = 1MHz

COSS (Figure 13)

-

Reverse Transfer Capacitance

CRSS

-

TYP

MAX UNITS

-

225

ns

10

-

ns

140

-

ns

45

-

ns

35

-

ns

-

120

ns

55

72

nC

31

40

nC

2.2

2.9

nC

6.00

-

nC

15.50

nC

2100

-

pF

1050

-

pF

225

-

pF

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

Source to Drain Diode Voltage

Reverse Recovery Time

Reverse Recovered Charge

VSD

trr

QRR

ISD = 55A

ISD = 55A, dISD/dt = 100A/µs

ISD = 55A, dISD/dt = 100A/µs

Typical Performance Curves

MIN

TYP

MAX UNITS

-

-

1.25

V

-

-

77

ns

-

-

143

nC

1.2

1.0

0.8

0.6

0.4

0.2

0

0

25

50

75

100

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

80

VGS = 10V

60

VGS = 4.5V

40

20

0

25

50

75

100

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

©2003 Fairchild Semiconductor Corporation

HUF76137P3, HUF76137S3S Rev. C1

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