1075MP Ver la hoja de datos (PDF) - GHz Technology
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1075MP Datasheet PDF : 2 Pages
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1075 MP
75 Watt, 50 Volts, Class C
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1075 MP is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 1025-1150 MHz. The device has gold
thin-film metallization for proven highest MTTF. The transistor includes
input prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
250 Watts Pk
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
65 Volts
3.5 Volts
6.5 Amps Pk
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150oC
+ 200oC
CASE OUTLINE
55FU, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F= 1025-1150 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz
75
Watts
13 Watts
7.5 9.0
dB
40
%
20:1
BVebo Emitter to Base Breakdown
Ie = 5 mA
3.5
Volts
BVces
Collector to Emitter Breakdown Ic = 15mA
65
Volts
Hfe
DC Current Gain to Emitter
Vce = 5V, Ic = 100 mA 20
Cob
Output Capacitance
Vcb = 50 V, f = 1 MHz
45
50
pF
θjc2
Thermal Resistance
Pulsed
0.6 oC/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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