P06P03LVG Ver la hoja de datos (PDF) - Niko Semiconductor

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Fabricante

P06P03LVG

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Niko Semiconductor 

NIKO-SEM

P-Channel Logic Level Enhancement P06P03LVG

Mode Field Effect Transistor

SOP-8

Lead-Free

DYNAMIC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge2

Gate-Source Charge2

Gate-Drain Charge2

Turn-On Delay Time2

Rise Time2

Turn-Off Delay Time2

Fall Time2

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

VGS = 0V, VDS = -15V, f = 1MHz

VDS = 0.5V(BR)DSS, VGS = -10V,

ID = -6A

VDS = -15V, RL = 1Ω

ID ≅ -1A, VGS = -10V, RGS = 6Ω

530

135

pF

70

10 14

2.2

nC

2

5.7

10

nS

18

5

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

Pulsed Current3

Forward Voltage1

IS

ISM

VSD

IF = -1A, VGS = 0V

Reverse Recovery Time

trr

IF = -5A, dlF/dt = 100A / µS

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

-2.1

A

-4

-1.2 V

15.5

nS

7.9

nC

REMARK: THE PRODUCT MARKED WITH “P06P03LVG”, DATE CODE or LOT #

Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name.

JUN-10-2004

2

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