P0102AA Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
P0102AA Datasheet PDF : 12 Pages
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Characteristics
1
Characteristics
P010xx
Table 2. Absolute ratings (limiting values) P010xxA and P010xxN
Symbol
Parameter
Value
IT(RMS)
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
On-state rms current (180° conduction angle)
TO-92
SOT-223
TO-92
Average on-state current (180° conduction angle)
SOT-223
Non repetitive surge peak on-state current
I²t value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
Peak gate current
Average gate power dissipation
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Tl = 55 °C
Tamb = 70 °C
Tl = 55 °C
Tamb = 70 °C
Tj = 25 °C
Tj = 25 °C
0.8
0.5
8
7
0.24
Tj = 125 °C
50
Tj = 125 °C
Tj = 125 °C
1
0.1
- 40 to + 150
- 40 to + 125
Unit
A
A
A
A2S
A/µs
A
W
°C
Symbol
Table 3. Absolute ratings (limiting values) P010xxL
Parameter
Value
IT(RMS)
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
On-state rms current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current
I²t value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
Peak gate current
Average gate power dissipation
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Tamb = 36 °C
Tamb = 36 °C
Tj = 25 °C
Tj = 25 °C
0.25
0.16
7
6
0.18
Tj = 125 °C
50
Tj = 125 °C
Tj = 125 °C
0.5
0.02
- 40 to + 150
- 40 to + 125
Unit
A
A
A
A2S
A/µs
A
W
°C
2/12
DocID15197 Rev 2
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