HiPerFETTM
Power MOSFETs
Single Die MOSFET
IXFN 340N07
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
Test Conditions
G
S
S
Maximum Ratings
V
DSS
V
DGR
VGS
VGSM
ID25
I
L(RMS)
IDM
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
T
stg
VISOL
M
d
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
TC = 25°C, Chip capability
Terminal current limit
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
T
J
£
150°C,
R
G
=
2
W
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque
Terminal connection torque
70
70
±20
±30
340
100
1360
200
64
4
5
V
V
V
V
A
A
A
A
mJ
J
V/ns
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
V = 70 V
DSS
ID25 = 340 A
= RDS(on)
4 mW
t
rr
£
250ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Internationalstandardpackages
miniBLOC, with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
FastintrinsicRectifier
Symbol
VDSS
V
GH(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 3 mA
V = V , I = 8 mA
DS
GS D
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 100A
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
70
2.0
TJ = 25°C
TJ = 125°C
V
4.0 V
±200 nA
100 mA
2 mA
4 mW
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
© 2000 IXYS All rights reserved
98547B (10/00)