BAW56T(2003) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BAW56T
(Rev.:2003)

Silicon Switching Diode

Infineon Technologies 

BAW56...

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Symbol

Diode reverse voltage

Peak reverse voltage

Forward current

Surge forward current, t = 1 µs

Total power dissipation

BAW56, TS ≤ 31°C

BAW56S, TS ≤ 85°C

BAW56T, TS ≤ 104°C

BAW56U, TS ≤ 90°C

BAW56W, TS ≤ 103°C

VR

VRM

IF

IFS

Ptot

Junction temperature

Tj

Storage temperature

Tstg

Thermal Resistance

Parameter

Junction - soldering point1)

BAW56

BAW56S

BAW56T

BAW56U

BAW56W

Symbol

RthJS

Value

80

85

200

4.5

330

250

250

250

250

150

-65 ... 150

Value

360

260

185

240

190

1For calculation of RthJA please refer to Application Note Thermal Resistance

Unit

V

mA

A

mW

°C

Unit

K/W

2

Jun-03-2003

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