P4C1256L Ver la hoja de datos (PDF) - Performance Semiconductor

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P4C1256L

LOW POWER 32K x 8 STATIC CMOS RAM

Performance Semiconductor 

DATA RETENTION CHARACTERISTICS

Symbol

Parameter

Test Conditons

VDR

VCC for Data Retention

ICCDR Data Retention Current

t

Chip Deselect to

CDR

Data Retention Time

tR†

Operation Recovery Time

*TA = +25°C

§tRC = Read Cycle Time

† This parameter is guaranteed but not tested.

CE ≥ VCC –0.2V,

VIN ≥ VCC –0.2V

or

V

IN

≤

0.2V

DATA RETENTION WAVEFORM

P4C1256L

Typ.*

Max

Min

VCC =

VCC =

Unit

2.0V 3.0V 2.0V 3.0V

2.0

V

10

15 600 900 µA

0

ns

tRC§

ns

Document # SRAM121 REV E

Page 7 of 11

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