OPB770 Ver la hoja de datos (PDF) - Optek Technology

Número de pieza

componentes Descripción

Fabricante

OPB770

Reflective Object Sensor

Optek Technology 

Type OPB750N

Electrical Characteristics (TA = 25o C unless otherwise noted)

SYMBOL

Input Diode

PARAMETER

VF

Forward Voltage

IR

Reverse Current

Output Phototransistor

V(BR)CEO Collector-Emitter Breakdown Voltage

ICEO Collector Dark Current

Coupled

VCE(SAT) Saturation Voltage

IC(ON)

On-State Collector Current

IC(OFF) Off-State Collector Current

MIN MAX UNITS

TEST CONDITIONS

1.80

100

V IF = 40 mA

µA VR = 2.0 V

30

100

V IC = 100 µA

nA VCE = 10 V, IF = 0, H = 0

0.40

500

375

250

250

V IC = 150 µA, IF = 30 mA, d = 0.22”

µA VCE = 5 V, IF = 30 mA, d = 0.08”(5)

µA

µA

VCE = 5 V, IF = 30 mA, d = 0.15”(5)

VCE = 5 V, IF = 30 mA, d = 0.22”(5)

nA

IF = 30 mA, VCE = 5 V(6),

d = 0.08”, 0.15”, 0.22”

Typical Performance Curves

Normalized Collector Current vs.

Object Distance

Normalized to d = .150"

IF = 30 mA

+2σ VCE = 5 V

Average

-2σ

Distance to Reflective Surface - Inches

Normalized Ouput Current vs.

Forward Current

Normalized to IF = 30 mA

VCE = 5 V

Average

+2σ

-2σ

Forward Current - mA

Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.

Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396

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