Type OPB702D
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
Input Diode
VF
Forward Voltage
IR
Reverse Current
Output Phototransistor
V(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)ECO Emitter-Collector Breakdown Voltage
ICEO
Coupled
Collector-Emitter Leakage Current
IC(ON) On-State Collector Current
Collector-Emitter Saturation Voltage
VCE(SAT)
MIN MAX UNITS
TEST CONDITIONS
1.8
V IF = 20 mA
100 µA VR = 2.0 V
15.0
5.0
250
V IC = 1 mA, I F = 0 , Ee = 0
V IE = 100 µA, IF = 0, Ee = 0
nA VCE = 10.0 V, IF = 0, Ee = 0
2.0
1.10
mA
VCE = 5.0 V, IF = 40 mA,
d = 0.150”(3.81 mm)(3)(4)
V
IC = 400 µA, IF = 40 mA,
d = 0.150”(3.81 mm)(3)(4)