NTR4501NT3 Ver la hoja de datos (PDF) - TY Semiconductor

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componentes Descripción

Fabricante

NTR4501NT3

Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23

TY Semiconductor 

Electrical Characteristics (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3) V(BR)DSS

VGS = 0 V, ID = 250 mA

20

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

TY CHARACTERISTICS

IDSS

IGSS

VGS = 0 V TJ = 25°C

VDS = 16 V TJ = 85°C

VDS = 0 V, VGS = ±12 V

Gate Threshold Voltage (Note 3)

Negative Threshold Temperature

Coefficient

VGS(TH)

VGS(TH)/TJ

VGS = VDS, ID = 250 mA

0.65

Drain−to−Source On Resistance

Forward Transconductance

CHARGES AND CAPACITANCES

RDS(on)

gFS

VGS = 4.5 V, ID = 3.6 A

VGS = 2.5 V, ID = 3.1 A

VDS = 5.0 V, ID = 3.6 A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate−to−Source Gate Charge

Gate−to−Drain Charge

SWITCHING CHARACTERISTICS (Note 4)

Ciss

Coss

Crss

QG(TOT)

QGS

QGD

VGS = 0 V, f = 1.0 MHz,

VDS = 10 V

VGS = 4.5 V, VDS = 10 V,

ID = 3.6 A

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

SOURCE−DRAIN DIODE CHARACTERISTICS

td(on)

tr

td(off)

tf

VGS = 4.5 V, VDS = 10 V,

ID = 3.6 A, RG = 6.0 W

Forward Diode Voltage

VSD

VGS = 0 V, ISD = 1.6 A

Reverse Recovery Time

tRR

Charge Time

Discharge Time

ta

VGS = 0 V,

dIS/dt = 100 A/ms,

tb

IS = 1.6 A

Reverse Recovery Charge

QRR

3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

Product specification

NTR4501N

Typ

Max

Units

24.5

V

22

mV/°C

1.5

mA

10

mA

±100

nA

−2.3

70

85

9

1.2

V

mV/°C

80

mW

105

S

200

80

pF

50

2.4

6.0

0.5

nC

0.6

6.5

12

ns

12

3

0.8

1.2

V

7.1

5

ns

1.9

3.0

nC

http://www.twtysemi.com

sales@twtysemi.com

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