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NTE5620

TRIAC 800VRM, 8A, TO220 Full Pack

NTE Electronics 

NTE5620

TRIAC

800VRM, 8A, TO220 Full Pack

The NTE5620 TRIAC is designed primarily for full–wave AC control applications, such as light dim-

mers, heater controls, motor controls, and power supplies; or wherever full wave silicon gate con-

trolled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting

state for either polarity of applied voltage with positive or negative gate triggering.

Features:

D Blocking Voltage – 800 Volts

D All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability

D Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability

D Gate Triggering Guaranteed in Four Modes

Absolute Maximum Ratings:

Peak Repetitive Off–State Voltage, VDRM

(TJ = –40° to +125°C, 1/2 Sine Wave 50 to 60HZ, Gate Open, Note 1) . . . . . . . . . . . . . 800V

On–State Current RMS, IT(RMS)

(TC = +80°C, Full Cycle Sine Wave 50 to 60HZ, Note 2 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

Peak Non–Repetitive Surge Current, ITSM

(One Full Cycle, 60Hz, TC = +125°C, Preceded and followed by rated current) . . . . . . 100A

Peak Gate Power (TC = +80°C, Pulse Width = 2µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W

Average Gate Power (TC = +80°C, t = 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW

Peak Gate Current (Pulse Width = 2µs), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

RMS Isolation Voltage (TA = +25°C, Relative Humidity ≤ 20%), V(ISO) . . . . . . . . . . . . . . . . . . . 1500V

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W

Typical Thermal Resistance, Case–to–Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W

Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a

constant current source for blocking capability such that the voltage applied exceeds the

rated blocking voltage.

Note 2. The case temperature reference point for all TC measurements is a point on the center

lead of the package as close as possible to the plastic body.

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