NTE5498 Ver la hoja de datos (PDF) - NTE Electronics

Número de pieza

componentes Descripción

Fabricante

NTE5498

Silicon Controlled Rectifier (SCR) 12 Amp, TO220

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Holding Current

IH RGK = 1kΩ

− − 40 mA

Latching Current

IL RGK = 1kΩ

− − 30 mA

Critical Rate of Voltage Rise dv/dt VD = .67 x VDRM, RGK = 1kΩ, TJ = +125°C 100 − − V/μs

Critical Rate of Current Rise di/dt IG = 50mA, diG/dt = 0.5A/μs, TJ = +125°C 100 − − A/μs

Gate Controlled Delay Time tgd IG = 50mA, diG/dt = 0.5A/μs

− − 500 ns

Commutated Turn−Off Time tq VD = .67 x VDRM, VR = 35V, IT = IT(AV),

TC = +85°C

− − 50 μs

.147 (3.75)

Dia Max

.420 (10.67)

Max

Anode

.110 (2.79)

.500

(12.7)

Max

.070 (1.78) Max

Cathode

.100 (2.54)

.250 (6.35)

Max

.500

(12.7)

Min

Gate

Anode

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