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NTE5498

Silicon Controlled Rectifier (SCR) 12 Amp, TO220

NTE Electronics 

NTE5498 & NTE5499

Silicon Controlled Rectifier (SCR)

12 Amp, TO220

Description:

The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated

PNPN devices in a TO220 type package designed for general purpose high current applications

where moderate gate sensitivity is required.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Peak Repetitive Off−State Voltage (TJ = −40° to +125°C, RGK = 1kΩ), VDRM, VRRM

NTE5498 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

NTE5499 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

RMS On−State Current (All Conduction Angles, TC = +85°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . 12A

Average On−State Current (Half Cycle, 180° Conduction Angle, TC = +85°C), IT(AV) . . . . . . . . 7.6A

Non−Repetitive On−State Current (Half Cycle, 60Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132A

Non−Repetitive On−State Current (Half Cycle, 50Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A

Circuit Fusing Considerations (Half Cycle, t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A2s

Peak Gate Current (10μs Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Peak Gate Dissipation (10μs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W

Average Gate Dissipation (20ms Max), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C

Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W

Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W

Lead Temperature (During Soldering, 1.6mm from case, 10sec max), TL . . . . . . . . . . . . . . . +250°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Off−State Leakage Current IDRM, VDRM + VRRM, RGK = 1kΩ TJ = +125°C − − 1.5 mA

IRRM

TJ = +25°C − − 5.0 μA

On−State Voltage

VT IT = 24A, TJ = +25°C

− − 1.8 V

On−State Threshold Voltage VT(TO) TJ = +125°C

− − 1.0 V

On−State Slope Resistance rT TJ = +125°C

− − 36 mΩ

Gate−Trigger Current

IGT VD = 7V

5 − 10 mA

Gate−Trigger Voltage

VGT VD = 7V

− − 2.0 V

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