NTE48 Ver la hoja de datos (PDF) - NTE Electronics

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componentes Descripción

Fabricante

NTE48

Silicon NPN Transistor Darlington, General Purpose Amplifier, High Current

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter ON Voltage

Small–Signal Characteristics

hFE

VCE(sat)

VBE(on)

IC = 200mA, VCE = 5V

IC = 1000mA, VCE = 5V

IC = 1000mA, IB = 2mA

IC = 1000mA, VCE = 5V

25,000 –

–

4,000 – 40,000

–

– 1.5 V

–

– 2.0 V

Current Gain–Bandwidth Product

fT IC = 200mA, VCE = 5V,

f = 100MHz

100 – 1000 MHz

Collector–Base Capacitance

Ccb VCB = 10V, IE = 0, f = 1MHz –

– 10 pF

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

.339

(8.62)

Max

Seating Plane

C

.512

(13.0)

B

Min

.026 (.66)

Dia Max

E

EBC

.100 (2.54)

.240 (6.09) Max

.200

(5.08)

Max

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